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MTB030P06KH8-0-T6-G Arkusz danych(PDF) 5 Page - Cystech Electonics Corp. |
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MTB030P06KH8-0-T6-G Arkusz danych(HTML) 5 Page - Cystech Electonics Corp. |
5 / 10 page CYStech Electronics Corp. Spec. No. : C104H8 Issued Date : 2016.04.29 Revised Date : Page No. : 5/10 MTB030P06KH8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 20 40 60 80 100 024 68 10 Normalized Brekdown Voltage vs Ambient Temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) -VDS, Drain-Source Voltage(V) -10V, -9V,-8V -4.5V Tj=25°C -7V -6V -5V ID=-250μA, VGS=0V -4V VGS=-3.5V Static Drain-Source On-State resistance vs Drain Current 10 100 0.1 1 10 100 -ID, Drain Current(A) VGS=-4.5V VGS=-10V VGS=-4V Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 04 8 12 16 20 -IS, Source Drain Current(A) VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 50 100 150 200 250 300 350 400 450 500 02 4 6 8 1 -VGS, Gate-Source Voltage(V) Tj=25°C Tj=150°C 0 ID=-6A Normalized Drain-Source On-State Resistance vs Junction Tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS=-10V, ID=-6A RDS(ON)@Tj=25°C : 21.4mΩ typ. |
Podobny numer części - MTB030P06KH8-0-T6-G |
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Podobny opis - MTB030P06KH8-0-T6-G |
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