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2SK319 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK319 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK319 ·ELECTRICAL CHARACTERISTICS (T C=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 400 V VGS(TH) Gate Threshold Voltage VDS= 10VGS; ID= 1mA 1.0 5.0 V RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID= 3A 1.10 1.83 Ω IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 ±1 uA IDSS Zero Gate Voltage Drain Current VDS=320V; VGS= 0 1 mA VSD Diode Forward Voltage IF= 3A; VGS=0 0.85 V tr Rise time VGS=15V;ID=2A;RL=15Ω 35 ns ton Turn-on time 50 ns tf Fall time 35 ns toff Turn-off time 120 ns PDF pdfFactory Pro www.fineprint.cn |
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