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2SK1340 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK1340 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK1340 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 900 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 2.0 3.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A 3.0 4.0 Ω IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 ±10 uA IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 250 uA VSD Diode Forward Voltage IF=5A; VGS=0 0.9 V tr Rise time VGS=10V;ID=3A;RL=10Ω 70 ns ton Turn-on time 85 ns tf Fall time 90 ns toff Turn-off time 180 ns PDF pdfFactory Pro www.fineprint.cn |
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