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2N1597 Arkusz danych(PDF) 2 Page - List of Unclassifed Manufacturers

Numer części 2N1597
Szczegółowy opis  SILICON THYRISTOR(low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit)
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Producent  ETC [List of Unclassifed Manufacturers]
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2N1597 Arkusz danych(HTML) 2 Page - List of Unclassifed Manufacturers

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COMSET SEMICONDUCTORS
2/2
2N1595 thru 2N1599
Symbol
Ratings
2N1595
2N1596
2N1597
2N1598
2N1599
IDRM
Peak Forward Blocking Current
(Rated
VDRM with gate open , TJ
=125°C)
Max :1.0
mA
IGT
Gate Trigger Current (2)
Anode Voltage=7.0 Vdc, RL=12
Typ : 2.0
Max : 10
mA
Gate Trigger Voltage
Anode Voltage=7.0 Vdc, RL=12
Typ : 0.7
Max : 3.0
VGT
VDRM = Rated, RL=100
Ω, T
J=125°C
Min : 0.2
V
IH
Holding Current
Anode Voltage=7.0 Vdc, gate open
Typ : 5.0
mA
VTM
Forward On Voltage
IT=1 Adc
Typ : 1.1
Max : 2.0
V
tgt
Turn-On Time (td+tr)
IGT=10 mA, IT=1 A
Typ : 0.8
µs
tq
Turn-Off Time
IT=1 A, IR =1 A, dv/dt=20 V/
µs,
TJ=125°C
VDRM = Rated Voltage
Typ : 10
µs
* VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.
MECHANICAL DATA CASE TO-39
DIMENSIONS
mm inches
A
6,25
0,24
B
13,59
0,53
C
9,24
0,36
D
8,24
0,32
E
0,78
0,03
F
1,05
0,041
G
0,42
0,165
H
45°
L5,1
0,2
Pin 1 :
Cathode
Pin 2 :
Gate
Pin 3 :
Anode
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.


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