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2SJ117 Arkusz danych(PDF) 2 Page - Hitachi Semiconductor |
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2SJ117 Arkusz danych(HTML) 2 Page - Hitachi Semiconductor |
2 / 3 page 2SJ117 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS –400 V Gate to source voltage V GSS ±20 V Drain current I D –2 A Drain peak current I D(pulse) –4 A Body to drain diode reverse drain current I DR –2 A Channel dissipation Pch* 1 40 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Value at T C = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS –400 — — V I D = –10 mA, VGS = 0 Gate to source leak current I GSS ——±1 µA V GS = ±20 V, VDS = 0 Zero gate voltage drain current I DSS ——–1 mA V DS = –320 V, VGS = 0 Gate to source cutoff voltage V GS(off) –2.0 — –5.0 V I D = –1 mA, VDS = –10 V Static drain to source on state R DS(on) —5 7 I D = –1 A, VGS = –15 V* 1 resistance Forward transfer admittance |y fs| 0.4 0.7 — S I D = –1 A, VDS = –20 V* 1 Input capacitance Ciss — 520 — pF V DS = –10 V, VGS = 0, Output capacitance Coss — 110 — pF f = 1 MHz Reverse transfer capacitance Crss — 15 — pF Turn-on delay time t d(on) — 10 — ns I D = –2 A, VGS = –15 V, Rise time t r — 25 — ns R L = 15 Turn-off delay time t d(off) —45 — ns Fall time t f —35 — ns Body to drain diode forward voltage V DF — –0.8 — V I F = –1 A, VGS = 0 Body to drain diode reverse recovery time t rr — 300 — ns I F = –1 A, VGS = 0, di F/dt = 100 A/µs Note: 1. Pulse test |
Podobny numer części - 2SJ117 |
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Podobny opis - 2SJ117 |
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