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2SJ117 Arkusz danych(PDF) 2 Page - Hitachi Semiconductor

Numer części 2SJ117
Szczegółowy opis  Silicon P-Channel MOS FET
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Producent  HITACHI [Hitachi Semiconductor]
Strona internetowa  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ117 Arkusz danych(HTML) 2 Page - Hitachi Semiconductor

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2SJ117
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–400
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–2
A
Drain peak current
I
D(pulse)
–4
A
Body to drain diode reverse drain current
I
DR
–2
A
Channel dissipation
Pch*
1
40
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Value at T
C = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–400
V
I
D = –10 mA, VGS = 0
Gate to source leak current
I
GSS
——±1
µA
V
GS = ±20 V, VDS = 0
Zero gate voltage drain current I
DSS
——–1
mA
V
DS = –320 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–2.0
–5.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
R
DS(on)
—5
7
I
D = –1 A, VGS = –15 V*
1
resistance
Forward transfer admittance
|y
fs|
0.4
0.7
S
I
D = –1 A, VDS = –20 V*
1
Input capacitance
Ciss
520
pF
V
DS = –10 V, VGS = 0,
Output capacitance
Coss
110
pF
f = 1 MHz
Reverse transfer capacitance
Crss
15
pF
Turn-on delay time
t
d(on)
10
ns
I
D = –2 A, VGS = –15 V,
Rise time
t
r
25
ns
R
L = 15
Turn-off delay time
t
d(off)
—45
ns
Fall time
t
f
—35
ns
Body to drain diode forward
voltage
V
DF
–0.8
V
I
F = –1 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
300
ns
I
F = –1 A, VGS = 0,
di
F/dt = 100 A/µs
Note:
1. Pulse test


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