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6N80 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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6N80 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc N-Channel MOSFET Transistor 6N80 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 800 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-voltage IS= 10A ;VGS= 0 2.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 0.85A 1.2 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=700V; VGS= 0 250 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 3678 pF Crss Reverse Transfer capacitance 816 Coss Output Capacitance 293 tr Rise Time VGS=10V; ID=5.0A; VDD=406V; RL=10Ω 280 ns td(on) Turn-on Delay Time 130 tf Fall Time 210 td(off) Turn-off Delay Time 630 · PDF pdfFactory Pro www.fineprint.cn |
Podobny numer części - 6N80 |
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Podobny opis - 6N80 |
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