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BC846S Arkusz danych(PDF) 2 Page - Diotec Semiconductor

Numer części BC846S
Szczegółowy opis  SMD General Purpose Dual NPN Transistors
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Producent  DIOTEC [Diotec Semiconductor]
Strona internetowa  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC846S Arkusz danych(HTML) 2 Page - Diotec Semiconductor

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BC846S ... BC849S
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
per transistor – pro Transistor
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
ICBO
15 nA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 5 V, (C open)
IEBO
100 nA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
4.5 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 420 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC856S ... BC859S
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150
100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1


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