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BC846S Arkusz danych(PDF) 2 Page - Diotec Semiconductor |
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2 / 2 page BC846S ... BC849S Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) per transistor – pro Transistor Min. Typ. Max. Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 30 V, (E open) ICBO – – 15 nA Emitter-Base cutoff current – Emitter-Basis-Reststrom VEB = 5 V, (C open) IEBO – – 100 nA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz fT 100 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – – 4.5 pF Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BC856S ... BC859S Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 1 |
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