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SI4493DY Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI4493DY Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si4493DY Vishay Siliconix New Product www.vishay.com 2 Document Number: 72256 S-31420—Rev. A, 07-Jul-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 0.6 - 1.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V -1 mA Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V, TJ = 70_C -10 mA On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V -30 A Drain Source On State Resistancea rDS( ) VGS = - 4.5 V, ID = - 14 A 0.0065 0.00775 W Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 11 A 0.010 0.01225 W Forward Transconductancea gfs VDS = - 10 V, ID = - 14 A 60 S Diode Forward Voltagea VSD IS = - 2.7 A, VGS = 0 V - 0.68 - 1.1 V Dynamicb Total Gate Charge Qg 65 110 Gate-Source Charge Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 14 A 14.5 nC Gate-Drain Charge Qgd 21 Turn-On Delay Time td(on) 110 165 Rise Time tr VDD = - 10 V, RL = 10 W 150 225 ns Turn-Off Delay Time td(off) VDD = - 10 V, RL = 10 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W 220 330 ns Fall Time tf 140 210 Gate Resistance Rg 3.8 W Source-Drain Reverse Recovery Time trr IF = - 2.7 A, di/dt = 100 A/ms 85 130 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 10 20 30 40 50 0 1234 5 VGS = 5 thru 2.5 V TC = 125_C -55 _C 25 _C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 2 V |
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