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2N3766 Arkusz danych(PDF) 1 Page - Microsemi Corporation

Numer części 2N3766
Szczegółowy opis  NPN POWER SILICON TRANSISTOR
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Producent  MICROSEMI [Microsemi Corporation]
Strona internetowa  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3766 Arkusz danych(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices
Qualified Level
2N3766
2N3767
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3766
2N3767
Units
Collector-Emitter Voltage
VCEO
60
80
Vdc
Collector-Base Voltage
VCBO
80
100
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Base Current
IB
2.0
Adc
Collector Current
IC
4.0
Adc
Total Power Dissipation
@ TC = +25
0C (1)
PT
25
W
Operating & Storage Temperature Range
Top, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
7.0
0C/W
1) Derate linearly 143 mW/
0C between TC = +250C and TC = +2000C
TO-66*
(TO-213AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N3766
2N3767
V(BR)CEO
60
80
Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
2N3766
VCE = 80 Vdc
2N3767
ICEO
500
500
µAdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 1.5 Vdc
2N3766
VCE = 100 Vdc, VBE = 1.5 Vdc
2N3767
ICEX
10
10
µAdc
Collector-Base Cutoff Current
VCB = 80 Vdc
2N3766
VCB = 100 Vdc
2N3767
ICBO
10
10
µAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
500
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


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