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AD8512 Arkusz danych(PDF) 6 Page - Analog Devices

Numer części AD8512
Szczegółowy opis  Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers
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Strona internetowa  http://www.analog.com
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AD8510/AD8512/AD8513
Rev. E | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 3. AD8510/AD8512/AD8513 Stress Ratings1
Parameter
Rating
Supply Voltage
±18 V
Input Voltage
±VS
Output Short-Circuit Duration to GND
Observe Derating
Curves
Storage Temperature Range
R, RM Packages
−65°C to +150°C
Operating Temperature Range
−40°C to +125°C
Junction Temperature Range
R, RM Packages
−65°C to +150°C
Lead Temperature Range
(Soldering, 10 sec)
300°C
Electrostatic Discharge (HBM)
2000 V
Table 4. Thermal Resistance
Package Type
θJA2
θJC
Unit
8-Lead MSOP (RM)
210
45
°C/W
8-Lead SOIC (R)
158
43
°C/W
14-Lead SOIC (R)
120
36
°C/W
14-Lead TSSOP (RU)
180
35
°C/W
1 Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions above those listed in
the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device
reliability.
2 θJA is specified for worst-case conditions, i.e., θJA is specified for device
soldered in circuit board for surface-mount packages.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
this product features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.


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