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IRF223 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF223 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF223 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 150 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=2.5A 1.2 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=150V; VGS=0 250 uA VSD Diode Forward Voltage IS=4A; VGS=0 1.8 V Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 600 pF Crss Reverse Transfer Capacitance 80 Coss Output Capacitance 300 tr Rise Time ID=2.5A; VDD=100V; RL=50Ω 60 ns td(on) Turn-on Delay Time 40 tf Fall Time 60 td(off) Turn-off Delay Time 100 PDF pdfFactory Pro www.fineprint.cn |
Podobny numer części - IRF223 |
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Podobny opis - IRF223 |
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