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ADS7806UG4 Arkusz danych(PDF) 2 Page - Texas Instruments |
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ADS7806UG4 Arkusz danych(HTML) 2 Page - Texas Instruments |
2 / 25 page ADS7806 2 SBAS021B www.ti.com Analog Inputs: R1IN ............................................................................ ±12V R2IN ........................................................................... ±5.5V CAP ................................... VANA + 0.3V to AGND2 – 0.3V REF .......................................... Indefinite Short to AGND2, Momentary Short to VANA Ground Voltage Differences: DGND, AGND1, and AGND2 ............. ±0.3V VANA ....................................................................................................... 7V VDIG to VANA ...................................................................................... +0.3V VDIG ........................................................................................................ 7V Digital Inputs ............................................................. –0.3V to VDIG + 0.3V Maximum Junction Temperature ................................................... +165 °C Internal Power Dissipation ............................................................. 825mW Lead Temperature (soldering, 10s) ............................................... +300 °C ABSOLUTE MAXIMUM RATINGS(1) ELECTRICAL CHARACTERISTICS At TA = –40°C to +85°C, fS = 40kHz, VDIG = VANA = +5V, and using internal reference and fixed resistors (see Figure 7b), unless otherwise specified. ADS7806P, U ADS7806PB, UB PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS RESOLUTION 12 ✻ Bits ANALOG INPUT Voltage Ranges ±10, 0 to +5, 0 to +4 V Impedance (See Table I) Capacitance 35 ✻ pF THROUGHPUT SPEED Conversion Time 20 ✻ µs Complete Cycle Acquire and Convert 25 ✻ µs Throughput Rate 40 ✻ kHz DC ACCURACY Integral Linearity Error ±0.15 ±0.9 ✻ ±0.45 LSB(1) Differential Linearity Error ±0.15 ±0.9 ✻ ±0.45 LSB No Missing Codes Tested ✻ Bits Transition Noise(2) 0.1 ✻ LSB Gain Error ±0.2 ±0.1 % Full-Scale Error(3,4) ±0.5 ±0.25 % Full-Scale Error Drift ±7 ±5 ppm/ °C Full-Scale Error(3,4) Ext. 2.5000V Ref ±0.5 ±0.25 % Full-Scale Error Drift Ext. 2.5000V Ref ±0.5 ✻ ppm/ °C Bipolar Zero Error(3) ±10V Range ±10 ✻ mV Bipolar Zero Error Drift ±10V Range ±0.5 ✻ ppm/ °C Unipolar Zero Error(3) 0V to 5V, 0V to 4V Ranges ±3 ✻ mV Unipolar Zero Error Drift 0V to 5V, 0V to 4V Ranges ±0.5 ✻ ppm/ °C Recovery Time to Rated Accuracy 2.2 µF Capacitor to CAP 1 ✻ ms from Power-Down(5) Power-Supply Sensitivity +4.75V < VS < +5.25V ±0.5 ✻ LSB (VDIG = VANA = VS) MAXIMUM MINIMUM INTEGRAL SIGNAL-TO- SPECIFIED LINEARITY (NOISE + DISTORTION) PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT PRODUCT ERROR (LSB) RATIO (DB) PACKAGE-LEAD DESIGNATOR(1) RANGE MARKING NUMBER MEDIA, QUANTITY ADS7806P ±0.9 70 DIP-28 NT –40 °C to +85°C ADS7806P ADS7806P Tubes, 13 ADS7806PB ±0.45 72 "" " ADS7806PB ADS7806PB Tubes, 13 ADS7806U ±0.9 70 SO-28 DW –40 °C to +85°C ADS7806U ADS7806U Tubes, 28 " " " " " " ADS7806U ADS7806U/1K Tape and Reel, 1000 ADS7806UB ±0.45 72 "" " ADS7806UB ADS7806UB Tubes, 28 " " " " " " ADS7806UB ADS7806UB/1K Tape and Reel, 1000 PACKAGE/ORDERING INFORMATION ELECTROSTATIC DISCHARGE SENSITIVITY This integrated circuit can be damaged by ESD. Texas Instru- ments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degrada- tion to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. NOTE: (1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may affect device reliability. NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com. |
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