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IRF822FI Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF822FI Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF822FI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=1.5A 4 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 250 μA VSD Forward On-Voltage IS= 2.5A; VGS= 0 1.6 V Ciss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz 510 pF Coss Output Capacitance 60 pF Crss Reverse Transfer Capacitance 26 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Td(on) Turn-on Delay Time VDD=250V,ID=2.5A RG=18Ω 11 15 ns Tr Rise Time 11 18 ns Td(off) Turn-off Delay Time 29 42 ns Tf Fall Time 12 18 ns · PDF pdfFactory Pro www.fineprint.cn |
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