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IRF841FI Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części IRF841FI
Szczegółowy opis  isc N-Channel MOSFET Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF841FI Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IRF841FI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
450
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=4.4A
0.85
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±500
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 450V; VGS= 0
250
μA
VSD
Forward On-Voltage
IS= 8A; VGS= 0
2.0
V
Ciss
Input Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
1550
pF
Coss
Output Capacitance
175
pF
Crss
Reverse Transfer Capacitance
75
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Td(on)
Turn-on Delay Time
VDD=250V,ID=8A
RG=9.1Ω
15
21
ns
Tr
Rise Time
21
35
ns
Td(off)
Turn-off Delay Time
50
74
ns
Tf
Fall Time
20
30
ns
·
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