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IRFP460 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRFP460 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRFP460 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 11A 0.27 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VDS= 400V; VGS= 0; Tj= 150℃ 250 1000 μA VSD Forward On-Voltage IS= 21A; VGS= 0 1.8 V · PDF pdfFactory Pro www.fineprint.cn |
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