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KSD5075T Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KSD5075T Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor KSD5075T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 1 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz tf Fall Time IC= 3A , IB1= 0.8A ; IB2= -1.6A RL= 66.7Ω; VCC= 200V 0.4 μ s |
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