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CSD16340Q3 Arkusz danych(PDF) 5 Page - Texas Instruments |
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CSD16340Q3 Arkusz danych(HTML) 5 Page - Texas Instruments |
5 / 14 page VDS − Drain to Source Voltage − V 0 15 25 35 40 45 50 0.0 0.2 0.4 0.5 0.6 G001 0.1 0.3 30 20 5 10 VGS = 3.5V VGS = 8V VGS = 4.5V VGS = 3V VGS = 2.5V VGS − Gate to Source Voltage − V 5 15 25 35 40 45 1.7 1.1 1.3 1.5 2.1 G002 50 0.7 0.9 1.9 VDS = 5V 0 10 20 30 TC = −55 C ° TC = 125 C ° TC = 25 C ° t P – PulseDuration–s G012 0.01 0.1 10 1 0.001 0.01 0.1 1 10 100 0.001 1k 0.1 0.05 0.01 0.5 0.02 0.3 SinglePulse DutyCycle=t /t 1 2 TypicalR JA q =138 C/W(minCu) o T J =P xZq q JA JA xR t 1 t 2 P CSD16340Q3 www.ti.com SLPS247E – DECEMBER 2009 – REVISED AUGUST 2014 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: CSD16340Q3 |
Podobny numer części - CSD16340Q3_16 |
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Podobny opis - CSD16340Q3_16 |
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