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CSD17559Q5 Arkusz danych(PDF) 3 Page - Texas Instruments

Numer części CSD17559Q5
Szczegółowy opis  30V N-Channel NexFET Power MOSFET
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Strona internetowa  http://www.ti.com
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CSD17559Q5 Arkusz danych(HTML) 3 Page - Texas Instruments

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CSD17559Q5
www.ti.com
SLPS374A – NOVEMBER 2012 – REVISED SEPTEMBER 2014
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, IDS = 250 μA
30
V
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 24 V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, IDS = 250 μA
1.2
1.4
1.7
V
VGS = 4.5 V, IDS = 40 A
1.15
1.5
m
RDS(on)
Drain-to-Source On-Resistance
VGS = 10 V, IDS = 40 A
0.95
1.15
m
gƒs
Transconductance
VDS = 15 V, IDS = 40 A
235
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
7070
9200
pF
VGS = 0 V, VDS = 15 V,
Coss
Output Capacitance
1780
2314
pF
ƒ = 1 MHz
Crss
Reverse Transfer Capacitance
87
113
pF
RG
Series Gate Resistance
1.2
2.4
Qg
Gate Charge Total (4.5 V)
39
51
nC
Qgd
Gate Charge Gate-to-Drain
9.3
nC
VDS = 15 V, IDS = 40 A
Qgs
Gate Charge Gate-to-Source
14.4
nC
Qg(th)
Gate Charge at Vth
8.3
nC
Qoss
Output Charge
VDS = 15 V, VGS = 0 V
50
nC
td(on)
Turn On Delay Time
20
ns
tr
Rise Time
41
ns
VDS = 15 V, VGS = 4.5 V,
IDS = 40 A, RG = 2 Ω
td(off)
Turn Off Delay Time
32
ns
tƒ
Fall Time
14
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
ISD = 40 A, VGS = 0 V
0.8
1
V
Qrr
Reverse Recovery Charge
80
nC
VDD= 15 V, IF = 40 A, di/dt = 300 A/μs
trr
Reverse Recovery Time
37
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-Case Thermal Resistance(1)
1.2
°C/W
RθJA
Junction-to-Ambient Thermal Resistance(1)(2)
50
(1)
RθJC is determined with the device mounted on a 1 inch
2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inches × 1.5 inches
(3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board
design.
(2)
Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
Copyright © 2012–2014, Texas Instruments Incorporated
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