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CSD19537Q3 Arkusz danych(PDF) 7 Page - Texas Instruments

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Numer części CSD19537Q3
Szczegółowy opis  100V N-Channel NexFET Power MOSFET
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Strona internetowa  http://www.ti.com
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CSD19537Q3 Arkusz danych(HTML) 7 Page - Texas Instruments

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CSD19537Q3
www.ti.com
SLPS549A – AUGUST 2015 – REVISED MAY 2016
Product Folder Links: CSD19537Q3
Submit Documentation Feedback
Copyright © 2015–2016, Texas Instruments Incorporated
6 Device and Documentation Support
6.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.2 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.


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