CSD23202W10T datasheet(5/12 Pages) TI1

Numer części	CSD23202W10T

Szczegółowy opis	12-V P-Channel NexFET Power MOSFET

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Producent	TI1 [Texas Instruments]

Strona internetowa	http://www.ti.com

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0.4

0.5

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0.9

1

1.1

−75

−50

−25

0

25

50

75

100

125

150

175

TC - Case Temperature (ºC)

G001

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15

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0

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− V

GS - Gate-to- Source Voltage (V)

TC = 25°C,I D = − 0.5 A

TC = 125°C,I D = −0.5 A

G001

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0.5

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1.5

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2.5

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Qg - Gate Charge (nC)

G001

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− V

DS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

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− V

DS - Drain-to-Source Voltage (V)

VGS = −4.5 V

VGS = −2.5 V

VGS = −1.8 V

VGS = −1.5 V

G001

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− V

GS - Gate-to-Source Voltage (V)

TC = 125°C

TC = 25°C

TC = −55°C

G001

CSD23202W10

www.ti.com

SLPS506 – AUGUST 2014

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

VDS = –5 V

Figure 2. Saturation Characteristics

Figure 3. Transfer Characteristics

ID = –0.5 A

VDS = –6 V

Figure 4. Gate Charge

Figure 5. Capacitance

ID = –250 µA

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Drain-to-Source Resistance vs

Gate-to-Source Voltage

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