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CSD23280F3T Arkusz danych(PDF) 3 Page - Texas Instruments |
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CSD23280F3T Arkusz danych(HTML) 3 Page - Texas Instruments |
3 / 14 page 3 CSD23280F3 www.ti.com SLPS601 – APRIL 2016 Product Folder Links: CSD23280F3 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = –250 μA –12 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = –9.6 V –50 nA IGSS Gate-to-source leakage current VDS = 0 V, VGS = –5 V –25 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = –250 μA –0.40 –0.65 –0.95 V RDS(on) Drain-to-source on-resistance VGS = –1.5 V, IDS = –0.1 A 230 399 m Ω VGS = –1.8 V, IDS = –0.4 A 180 250 m Ω VGS = –2.5 V, IDS = –0.4 A 129 165 m Ω VGS = –4.5 V, IDS = –0.4 A 97 116 m Ω gfs Transconductance VDS = –1.2 V, IDS = –0.4 A 3 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = –6 V, ƒ = 1 MHz 180 234 pF Coss Output capacitance 73 95 pF Crss Reverse transfer Capacitance 8.5 11.1 pF RG Series gate resistance 9 Ω Qg Gate charge total (4.5 V) VDS = –6 V, IDS = –0.4 A 0.95 1.23 nC Qgd Gate charge gate-to-drain 0.068 nC Qgs Gate charge gate-to-source 0.30 nC Qg(th) Gate charge at Vth 0.15 nC Qoss Output charge VDS = –6 V, VGS = 0 V 1.07 nC td(on) Turn on delay time VDS = –6 V, VGS = –4.5 V, IDS = –0.4 A, RG = 0 Ω 8 ns tr Rise time 4 ns td(off) Turn off delay time 21 ns tf Fall time 8 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = –0.4 A, VGS = 0 V –0.73 –1.0 V (1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz. (0.071-mm) thick Cu. (2) Device mounted on FR4 material with minimum Cu mounting area. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC TYPICAL VALUES UNIT RθJA Junction-to-ambient thermal resistance(1) 90 °C/W Junction-to-ambient thermal resistance(2) 255 °C/W |
Podobny numer części - CSD23280F3T |
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