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CSD23280F3T Arkusz danych(PDF) 3 Page - Texas Instruments

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Numer części CSD23280F3T
Szczegółowy opis  12V P-Channel FemtoFET MOSFET
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Producent  TI1 [Texas Instruments]
Strona internetowa  http://www.ti.com
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CSD23280F3T Arkusz danych(HTML) 3 Page - Texas Instruments

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CSD23280F3
www.ti.com
SLPS601 – APRIL 2016
Product Folder Links: CSD23280F3
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, IDS = –250 μA
–12
V
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = –9.6 V
–50
nA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = –5 V
–25
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, IDS = –250 μA
–0.40
–0.65
–0.95
V
RDS(on)
Drain-to-source on-resistance
VGS = –1.5 V, IDS = –0.1 A
230
399
m
VGS = –1.8 V, IDS = –0.4 A
180
250
m
VGS = –2.5 V, IDS = –0.4 A
129
165
m
VGS = –4.5 V, IDS = –0.4 A
97
116
m
gfs
Transconductance
VDS = –1.2 V, IDS = –0.4 A
3
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
VGS = 0 V, VDS = –6 V,
ƒ = 1 MHz
180
234
pF
Coss
Output capacitance
73
95
pF
Crss
Reverse transfer Capacitance
8.5
11.1
pF
RG
Series gate resistance
9
Qg
Gate charge total (4.5 V)
VDS = –6 V, IDS = –0.4 A
0.95
1.23
nC
Qgd
Gate charge gate-to-drain
0.068
nC
Qgs
Gate charge gate-to-source
0.30
nC
Qg(th)
Gate charge at Vth
0.15
nC
Qoss
Output charge
VDS = –6 V, VGS = 0 V
1.07
nC
td(on)
Turn on delay time
VDS = –6 V, VGS = –4.5 V,
IDS = –0.4 A, RG = 0 Ω
8
ns
tr
Rise time
4
ns
td(off)
Turn off delay time
21
ns
tf
Fall time
8
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = –0.4 A, VGS = 0 V
–0.73
–1.0
V
(1)
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz. (0.071-mm) thick Cu.
(2)
Device mounted on FR4 material with minimum Cu mounting area.
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
TYPICAL VALUES
UNIT
RθJA
Junction-to-ambient thermal resistance(1)
90
°C/W
Junction-to-ambient thermal resistance(2)
255
°C/W


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