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TIP147T Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części TIP147T
Szczegółowy opis  isc Silicon PNP Darlington Power Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
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TIP147T Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
2
isc website:www.iscsemi.cn
isc Silicon PNP Darlington Power Transistor
TIP147T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -30mA, IB= 0
-100
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -5A ,IB= -10mA
-2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -10A ,IB= -40mA
-3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -10A ,IB= -40mA
-3.5
V
V BE(on)
Base-Emitter On Voltage
IC= -10A ; VCE= -4V
-3.0
V
ICBO
Collector Cutoff current
VCB= -100V, IE= 0
-1
mA
ICEO
Collector Cutoff current
VCE= -50V, IB= 0
-2
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-2
mA
hFE-1
DC Current Gain
IC= -5A ; VCE= -4V
1000
hFE-2
DC Current Gain
IC= -10A ; VCE= -4V
500
Switching Times
td
Delay Time
VCC= -30 V, IC= - 5.0 A,
IB1= -IB2 = -20 mA;
tp= 20μs
Duty Cycle≤20%
0.15
μ
s
tr
Rise Time
0.55
μ
s
tstg
Storage Time
2.5
μ
s
tf
Fall Time
2.5
μ
s


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