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SS247LSTT Arkusz danych(PDF) 1 Page - SEC Electronics Inc. |
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SS247LSTT Arkusz danych(HTML) 1 Page - SEC Electronics Inc. |
1 / 8 page SS247 CMOS Omnipolar High Sensitivity Micropower Hall Switch 1 V3.10 Nov 1, 2013 Features − Micropower consumption for battery powered applications − Omnipolar, output switches with absolute value of North or South pole from magnet − Operation down to 2.5V − High sensitivity for direct reed switch replacement applications − CMOS output 3 pin SOT23 (suffix SO) 3 pin SIP (suffix UA) General Description The SS247 Omnipolar Hall effect sensor IC is fabri- cated from mixed signal CMOS technology .It incor- porates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall ele- ment and analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the Bop/Brp thresholds then the output transistor is driven to change states according- ly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been op- timized for service in applications requiring extended operating lifetime in battery powered systems. The output transistor of the SS247 will be latched on (Bop) in the presence of a sufficiently strong South or North magnetic field facing the marked side of the package. The output will be latched off (Brp) in the absence of a magnetic field. Applications − Solid state switch − Handheld Wireless Handset Awake Switch − Lid close sensor for battery powered devices − Magnet proximity sensor for reed switch replacement in low duty cycle applications |
Podobny numer części - SS247LSTT |
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