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FDD6680S Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FDD6680S Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page FDD6680S Rev D (W) Typical Characteristics 0 10 20 30 40 50 60 0123 VDS, DRAIN-SOURCE VOLTAGE (V) 5.0V 4.5V 4.0V 3.5V 3.0V V GS = 10V 7.0V 0.8 1 1.2 1.4 1.6 1.8 2 0 102030 4050 ID, DRAIN CURRENT (A) V GS = 4.0V 6.0V 8.0V 10V 5.0V 4.5V 7.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 0.6 1 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) I D = 12.5A V GS = 10V 0 0.01 0.02 0.03 0.04 2 468 10 VGS, GATE TO SOURCE VOLTAGE (V) I D = 6.3A T A = 100 oC T A = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 50 123 4 5 VGS, GATE TO SOURCE VOLTAGE (V) T A = -55 oC 25 oC 100 oC VDS = 5V 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) T A = 100 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Podobny numer części - FDD6680S |
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Podobny opis - FDD6680S |
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