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TC281 Arkusz danych(PDF) 1 Page - Texas Instruments |
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TC281 Arkusz danych(HTML) 1 Page - Texas Instruments |
1 / 18 page TC281 1036- × 1010-PIXEL CCD IMAGE SENSOR SOCS058D – JUNE 1996 – REVISED MARCH 2003 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D High-Resolution, Solid-State Frame-Transfer Image Sensor D 11.3-mm Image Area Diagonal D 1000 (H) x 1000 (V) Active Elements D Up to 30 Frames per Second D 8-µm Square Pixels D Low Dark Current D Advanced Lateral Overflow Drain for Antiblooming D Single-Pulse Image Area Clear Capability D Dynamic Range of More Than 60 dB D High Sensitivity and Quantum Efficiency D Nondestructive Charge Detection Through Texas Instruments Advanced BCD Node Technology D High Near-Infrared (IR) and Blue Response D Solid-State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics description The TC281 is a frame-transfer charge-coupled-device (CCD) image sensor that provides high-resolution image acquisition capability for image-processing applications such as robotic vision, medical X-ray analysis, and metrology. The image-sensing area measures 8 mm horizontally and 8 mm vertically; the image-area diagonal measures 11,3 mm and the sensor has 8- µm square pixels. The image area contains 1000 active lines with 1000 active pixels per line. The dark reference signal can be obtained from ten dark reference lines located between the image area and the storage area, 28 dark reference pixels located at the left edge of each horizontal line, and 8 dark reference pixels located at the right edge of each horizontal line. The storage section of the TC281 device contains 1010 lines with 1036 pixels per line. The area is protected from exposure to light by a metal layer. Photoelectric charge that is generated in the image area of the sensor can be transferred into the storage section in less than 110 µs. After the image capture is completed (integration time) and the image is transferred into the storage, the image readout is accomplished by transferring charge, one line at a time, into the serial register located below the storage area. The serial register contains 1036 active pixels and 9 dummy pixels. The maximum serial-register data rate is 40 megapixels per second. If the storage area must be cleared of all charge, charge can be transferred quickly across the serial registers into the clearing drain located below the register. A high performance bulk charge detection (BCD) node converts charge from each pixel into an output voltage. A low-noise, two-stage, source-follower amplifier further buffers the signal before it is sent to the output pin. A readout rate of 30 frames per second is easily achievable with this device. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 2003, Texas Instruments Incorporated SUB 1 ODB 2 IAG 3 SUB 4 SAG 5 SAG 6 SUB 7 OUT 8 ADB 9 CDB 10 VGATE 11 22 SUB 21 TDB 20 IAG 19 SUB 18 SUB 17 SUB 16 NC 15 SRG 14 TRG 13 VSOURCE 12 RST DUAL-IN-LINE PACKAGE (TOP VIEW) All trademarks are the property of their respective owners. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. |
Podobny numer części - TC281_03 |
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Podobny opis - TC281_03 |
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