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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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TDC1000 Arkusz danych(PDF) 6 Page - Texas Instruments |
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TDC1000 Arkusz danych(HTML) 6 Page - Texas Instruments |
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6 / 60 page  TDC1000, TDC1000-Q1 SNAS648B – OCTOBER 2014 – REVISED AUGUST 2015 www.ti.com 6.5 Electrical Characteristics The electrical ratings specified in this section apply to all specifications in this document, unless otherwise noted. These specifications are interpreted as conditions that do not degrade the device parametric or functional specifications for the life of the product containing it. TA = 25°C, VDD = VIO = 3.7 V, VCOM = VCM = VDD / 2, CVCOM = 10 nF (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TRANSMITTER SIGNAL PATH (TX) HIGH VDD – 0.32 V VOUT(TX) Output voltage swing ƒout = 1 MHz, RL = 75 Ω to VCM LOW 0.32 V IOUT(TX) Output drive current ƒout = 1 MHz, RL = 75 Ω to VCM 22 mARMS ƒCLKIN = 8 MHz, divide-by-2 (programmable; ƒOUT(TX) Output TX frequency 4 MHz see Transmitter Signal Path) RECEIVER SIGNAL PATH (RX) LNA capacitive feedback, GPGA = 6 dB, ƒIN = 1 STOP cycle-to-cycle ΔtSTOP MHz, VIN = 100 mVPP, CVCOM = 1 µF and 50 psRMS jitter Figure 14 LNA Capacitive feedback, CIN = 300 pF, ƒIN = 1 GLNA LNA gain 20 dB MHz, RL = 100 kΩ to VCM, CVCOM = 1 µF LNA input referred Capacitive feedback, CIN = 300 pF, ƒ = 1 MHz, enLNA 2 nV/ √Hz noise density VDD = 3.1 V, VIN = VCM, RL = ∞, CVCOM = 1 µF HIGH VCM + (VCM – 0.24) / (GLNA) V Resistive feedback, RL = 1 kΩ to VIN(LNA) Input voltage range VCM, CVCOM = 1 µF LOW VCM – (VCM – 0.24) / (GLNA) V HIGH VDD – 0.24 V Resistive feedback, RL = 1 kΩ to VOUT(LNA) Output voltage range VCM, CVCOM = 1 µF LOW GND + 0.24 V Resistive feedback, RL = 1 kΩ to VCM, 100mV SRLNA Slew rate(1) 9 V/ μs step, CVCOM = 1 µF Capacitive feedback, ƒ = 1 MHz, RL = 100 kΩ XTK MUX ch-to-ch crosstalk –57 dB to VCM, CVCOM = 1 µF Capacitive feedback, CIN = 300 pF, RL= 100 kΩ BWLNA –3-dB bandwidth 5 MHz to VCM, CVCOM = 1 µF LNA input offset VOS(LNA) Resistive mode, VIN = VCM, RL = ∞ ±320 µV voltage VCOM VCOM VCOM output voltage VCM V CVCOM = 1 µF VCOM output error 0.5% PGA HIGH VCM + (VCM – 0.06) / (GPGA) V RL = 100 kΩ to VCM, CL = 10 pF VIN(PGA) PGA input range to GND LOW VCM – (VCM – 0.06) / (GPGA) V GPGAMIN PGA min gain 0 dB GPGAMAX PGA max gain DC, RL = ∞, CL = 10 pF 21 dB ΔGPGA PGA gain step size 3 dB GE(PGA) PGA gain error DC, GPGA = 0 dB, RL = ∞, CL = 10 pF 5% PGA gain temperature TCGPGA DC, GPGA = 0 dB, RL = ∞, CL = 10 pF 170 ppm/°C coefficient PGA input referred GPGA = 21 dB, ƒ = 1 MHz, VDD = 3.1V, VIN = enPGA 3.1 nV/ √Hz noise density VCM, RL = ∞, CVCOM = 1 µF HIGH VDD – 0.06 V RL = 100 kΩ to VCM, CL = 10 pF VOUT(PGA) Output range to GND LOW 60 mV GPGA = 21 dB, RL = 100 kΩ to VCM, CL = 10 BWPGA –3-db bandwidth 5 MHz pF, CVCOM = 1 µF GPGA = 21 dB, RL = 100 kΩ to VCM, CL = 10 SRPGA Slew rate(1) 12.5 V/µs pF, CVCOM = 1 µF (1) The slew rate is measured from 10% to 90% and is represented by the average of the rising and falling slew rates. 6 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TDC1000 TDC1000-Q1 |
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