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SI4362DY-T1E3 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SI4362DY-T1E3 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si4362DY Vishay Siliconix Document Number: 71628 S-40762—Rev. E, 19-Apr-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.000 0.002 0.004 0.006 0.008 0.010 0 1020304050 0 1 2 3 4 5 0 1020304050 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 Crss VDS = 15 V ID = 20 A VGS = 10 V ID = 20 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) VGS = 4.5 V 1.0 1.2 0.000 0.005 0.010 0.015 0.020 0.025 02468 10 1 10 50 ID = 20 A 0.00 0.2 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) 0 2000 4000 6000 8000 0 6 12 18 24 30 Coss Ciss |
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