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BCX55-16 Arkusz danych(PDF) 2 Page - Bruckewell Technology LTD

Numer części BCX55-16
Szczegółowy opis  NPN Silicon AF Transistors
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NPN Silicon AF Transistors
BCX54/BCX55/BCX56
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA IB=0
BCX54
BCX55
BCX56
45
60
100
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA IB=0
BCX54
BCX55
BCX56
45
60
80
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA IC=0
5
V
VCB=30V IE=0
100
nA
Collector cut-off current
ICBO
VCB=30V IE=0,TA=150℃
20
μA
DC current gain
hFE
VCE=2V IC=5mA
VCE=2V IC=150mA
VCE=2V IC=500mA
25
40
25
250
Collector-emitter saturation voltage
VCE(sat)
IC=500mA IB=50mA
0.5
V
Base-emitter voltage
VBE
IC=500mA ,VCE=2V
1
V
Transition frequency
fT
VCE=10V, IC=50mA,
f=20MHz
100
MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


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