2SA1162 datasheet(2/4 Pages) BWTECH

Numer części	2SA1162

Szczegółowy opis	Silicon PNP Epitaxial Type Transistor

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Producent	BWTECH [Bruckewell Technology LTD]

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2SA1162

Silicon PNP Epitaxial Type Transistor

Publication Order Number: [2SA1162]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATING @ Ta=25°C unless otherwise specified

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-150

mA

IB

Base Current

-30

mA

PC

Collector Dissipation

150

mW

Tj

Junction Temperature

125

°C

Tstg

Storage Temperature Range

-55 to +125

°C

ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

MIN

TYP

MAX

UNIT

ICBO

Collector cut-off current

VCB = -50 V , IE = 0

-0.1

μA

IEBO

Emitter cut-off current

VEB = -5 V , IC = 0

-0.1

μA

hFE

DC current gain

VCE = -6 V , IC = -2 mA

70

400

VCE(sat)

Collector-emitter saturation voltage

IC = -100mA , IB = -10mA

-0.1

-0.3

V

fT

Transition frequency

VCE = -10 V , IC = -1 mA

60

MHz

Cob

Collector output capacitance

VCB = -10 V , IE = 0

f = 1.0MHz

4

7

pF

NF

Noise figure

VCE = -6 V, IC = -0.1 mA

f = 1.0KHz , Rg = 10k

Ω

1.0

10

dB

*Pulse test: tp≤300μs, δ≤0.02.

hFE CLASSIFICATION

Marking

SO

SY

SR

Rank

O

Y

GR

Range

70-140

120~240

200-400

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