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LF411JAN Arkusz danych(PDF) 2 Page - Texas Instruments |
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LF411JAN Arkusz danych(HTML) 2 Page - Texas Instruments |
2 / 18 page LF411JAN SNOSAQ4A – OCTOBER 2005 – REVISED MARCH 2013 www.ti.com Simplified Schematic Detailed Schematic These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated Product Folder Links: LF411JAN Not Recommended For New Designs |
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