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IRL2505S Arkusz danych(PDF) 2 Page - International Rectifier |
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IRL2505S Arkusz danych(HTML) 2 Page - International Rectifier |
2 / 10 page IRL2505S/L Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.008 VGS = 10V, ID = 54A ––– ––– 0.010 Ω VGS = 5.0V, ID = 54A ––– ––– 0.013 VGS = 4.0V, ID = 45A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 59 ––– ––– S VDS = 25V, ID = 54A ––– ––– 25 VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 130 ID = 54A Qgs Gate-to-Source Charge ––– ––– 25 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 67 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V tr Rise Time ––– 160 ––– ID = 54A td(off) Turn-Off Delay Time ––– 43 ––– RG = 1.3Ω, VGS = 5.0V tf Fall Time ––– 84 ––– RD = 0.50Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 5000 ––– VGS = 0V Coss Output Capacitance ––– 1100 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 390 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH RDS(on) Static Drain-to-Source On-Resistance LS Internal Source Inductance 7.5 ns IDSS Drain-to-Source Leakage Current µA Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 54A, VGS = 0V trr Reverse Recovery Time ––– 140 210 ns TJ = 25°C, IF = 54A Qrr Reverse Recovery Charge ––– 650 970 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics S D G A 104 360 Pulse width ≤ 300µs; duty cycle ≤ 2%. Notes:
Uses IRL2505 data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ISD ≤ 54A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C V DD = 25V, starting TJ = 25°C, L = 240µH RG = 25Ω, IAS = 54A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) IGSS |
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