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600mA Silicon NPN Epitaxial Planar

Transistor

collector-emitterbreakdien voltage.

(BV

= 40V@I =10mA)

S

Lead-free parts for green partner, exceeds environmental

standards of MIL-STD-19500 /228

Features

CEO

C

mall load switch transistor with high gain and low

stauration voltage, is designed for general purpose

amflifier and switching applications at collector current.

Capable of 150mW power dissipation.

Suffix "-H" indicates Halogen-free part, ex.FMBT2222AW-H.

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High

Formosa MS

FMBT2222AW

Document ID

Issued Date

Revised Date

Revision

Page.

DS-231133

2009/08/10

2010/03/10

B

10

Package outline

PARAMETER

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector Current — Continuous

Total device dissipation FR-5 board

(1)

Storage temperature range

Operating junction temperature range

CONDITIONS

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

D

T

J

T

STG

-55 to +150

-55 to +150

75

40

6.0

UNIT

V

V

V

mA

mW

A

o

Junction to ambient

R

θJA

Thermal resistance(1)

T= 25 C

A

O

Derate above 25 C

O

mW/ C

O

Total device dissipation alumina

substrate(2)

P

D

mW

Junction to ambient

R

θJA

Thermal resistance(2)

T= 25 C

A

O

Derate above 25 C

O

mW/ C

O

1.FR-5 = 1.0 X 0.75 X0.062 in.

2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

Value

600

833

150

1.8

417

300

2.4

Mechanical data

Epoxy:UL94-V0 rated flame retardant

Case :

Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

Mounting Position : Any

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Molded plastic, SOT-323

Weight : Approximated 0.006 gram

Dimensions in inches and (millimeters)

0.032 (0.80)

0.040 (1.00)

0.054 (1.35)

0.046 (1.15)

SOT-323

(A)

(B)

0.096 (2.40)

0.080 (2.00)

(C)

0.021 (0.53)

0.017 (0.42)

SMD NPN Transistor