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TPIC6A259DWG4 Arkusz danych(PDF) 4 Page - Texas Instruments |
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TPIC6A259DWG4 Arkusz danych(HTML) 4 Page - Texas Instruments |
4 / 13 page TPIC6A259 POWER LOGIC 8BIT ADDRESSABLE LATCH SLIS004B − APRIL 1993 − REVISED SEPTEMBER 1995 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 schematic of inputs and outputs EQUIVALENT OF EACH INPUT TYPICAL OF ALL DRAIN OUTPUTS VCC Input LGND PGND DRAIN 25 V 12 V LGND RSENSE absolute maximum ratings over the recommended operating case temperature range (unless otherwise noted)† Logic supply voltage, VCC (see Note 1) 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Logic input voltage range, VI −0.3 V to 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power DMOS drain-to-source voltage, VDS (see Note 2) 50 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous source-to-drain diode anode current 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed source-to-drain diode anode current (see Note 3) 2 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed drain current, each output, all outputs on, ID, TC = 25°C (see Note 3) 1.1 A . . . . . . . . . . . . . . . . . . . . . Continuous drain current, each output, all outputs on, ID, TC = 25°C 350 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak drain current single output, TC = 25°C (see Note 3) 1.1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single-pulse avalanche energy, EAS (see Figure 6) 75 mJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Avalanche current, IAS (see Note 4) 600 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating virtual junction temperature range, TJ −40 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating case temperature range, TC −40 °C to 125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −65 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to LGND and PGND. 2. Each power DMOS source is internally connected to PGND. 3. Pulse duration ≤ 100 µs, and duty cycle ≤ 2%. 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 210 mH, and IAS = 600 mA (see Figure 6). DISSIPATION RATING TABLE PACKAGE TC ≤ 25°C POWER RATING DERATING FACTOR ABOVE TC = 25°C TC = 125°C POWER RATING DW 1750 mW 14 mW/ °C 350 mW NE 2500 mW 20 mW/ °C 500 mW |
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