SI4511DY-E3 datasheet(3/8 Pages) VISHAY

Numer części	SI4511DY-E3

Szczegółowy opis	N- and P-Channel 20-V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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Si4511DY

Vishay Siliconix

Document Number: 72223

S-41496—Rev. B, 09-Aug-04

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

N−CHANNEL

0

8

16

24

32

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0

8

16

24

32

40

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

0

2

4

6

8

10

0

3

6

9

1215

1821

24

0.6

0.8

1.0

1.2

1.4

1.6

−50

−25

0

25

50

75

100

125

150

0.000

0.005

0.010

0.015

0.020

0

8

16

24

32

40

0

400

800

1200

1600

2000

04

8

12

16

20

Output Characteristics

Transfer Characteristics

Gate Charge

On-Resistance vs. Drain Current

VDS − Drain-to-Source Voltage (V)

VGS = 10 thru 4 V

VGS − Gate-to-Source Voltage (V)

25_C

TC = 125_C

Qg − Total Gate Charge (nC)

VDS − Drain-to-Source Voltage (V)

Crss

Coss

Ciss

ID − Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

VGS = 10 V

VGS = 4.5 V

2 V

3 V

−55_C

VDS = 10 V

ID = 9.6 A

VGS = 10 V

ID = 9.6 A

Podobny numer części - SI4511DY-E3

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI4511DY-T1-E3	281Kb / 12P	N- and P-Channel 20-V (D-S) MOSFET Rev. E, 18-May-09
Vishay Siliconix	SI4511DY-T1-GE3	281Kb / 12P	N- and P-Channel 20-V (D-S) MOSFET Rev. E, 18-May-09

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Podobny opis - SI4511DY-E3

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Vishay Siliconix	SI3588DV	59Kb / 7P	N- and P-Channel 20-V (D-S) MOSFET Rev. A, 23-Oct-00
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	SI5515CDC	276Kb / 16P	N- and P-Channel 20 V (D-S) MOSFET Rev. B, 08-Mar-10
	SIA519EDJ	275Kb / 14P	N- and P-Channel 20-V (D-S) MOSFET Rev. B, 14-Dec-09
	SI4511DY	142Kb / 9P	N- and P-Channel 20-V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	AO7600	1Mb / 9P	N- and P- Channel 20 V (D-S) MOSFET

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