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ILC7081AIM5 Arkusz danych(PDF) 4 Page - Fairchild Semiconductor

Numer części ILC7081AIM5
Szczegółowy opis  50/100mA SOT-23 CMOS RF LDO Regulators
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

ILC7081AIM5 Arkusz danych(HTML) 4 Page - Fairchild Semiconductor

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ILC7080/81
4
REV. 1.0.7 4/3/03
Operations
The ILC7080/81 LDO design is based on an advanced cir-
cuit configuration for which patent protection has been
applied. Typically it is very difficult to drive a capacitive out-
put with an amplifier. The output capacitance produces a
pole in the feedback path, which upsets the carefully tailored
dominant pole of the internal amplifier. Traditionally the
pole of the output capacitor has been “eliminated” by reduc-
ing the output impedance of the regulator such that the pole
of the output capacitor is moved well beyond the gain band-
width product of the regulator. In practice, this is difficult to
do and still maintain high frequency operation. Typically the
output impedance of the regulator is not simply resistive,
such that the reactive output impedance interacts with the
reactive impedance of the load resistance and capacitance.
In addition, it is necessary to place the dominant pole of the
circuit at a sufficiently low frequency such that the gain of
the regulator has fallen below unity before any of the com-
plex interactions between the output and the load occur. The
ILC7080/81 does not try to eliminate the output pole, but
incorporates it into the stability scheme. The load and output
capacitor forms a pole, which rolls off the gain of the regula-
tor below unity. In order to do this the output impedance of
the regulator must be high, looking like a current source.
The output stage of the regulator becomes a transconduc-
tance amplifier, which converts a voltage to a current with a
substantial output impedance. The circuit which drives the
transconductance amplifier is the error amplifier, which
compares the regulator output to the band gap reference and
produces an error voltage as the input to the transconduc-
tance amplifier. The error amplifier has a dominant pole at
low frequency and a “zero” which cancels out the effects of
the pole. The zero allows the regulator to have gain out to the
frequency where the output pole continues to reduce the gain
to unity. The configuration of the poles and zero are shown in
figure 1.
Instead of powering the critical circuits from the unregulated
input voltage, the CMOS RF LDO powers the internal
circuits such as the bandgap, the error amplifier and most of
the transconductance amplifier from the boot strapped regu-
lated output voltage of the regulator. This technique offers
extremely high ripple rejection and excellent line transient
response.
A block diagram of the regulator circuit used in the
ILC7080/81 is shown in figure 2, which shows the input-to-
output isolation and the cascaded sequence of amplifiers that
implement the pole-zero scheme outlined above.
The ILC7080/81 were designed in a CMOS process with
some minor additions, which allow the circuit to be used at
input voltages up to 13V. The resulting circuit exceeds the
frequency response of traditional bipolar circuits. The
ILC7080/81 is very tolerant of output load conditions with
the inclusion of both short circuit and thermal overload
protection. The device has a very low dropout voltage,
typically a linear response of 1mV per milliamp of load
current, and none of the quasi-saturation characteristics of a
bipolar output device. All the good features of the frequency
response and regulation are valid right to the point where the
regulator goes out of regulation in a 4mV transition region.
Because there is no base drive, the regulator is capable of
providing high current surges while remaining in regulation.
This is shown in the high peak current of 500mA which
allows for the ILC7080/81 to be used in systems that require
short burst mode operation.
Figure 1. LC7080/81 RF LDO frequency response
DOMINANT POLE
OUTPUT POLE
85 dB
COMPENSATING
ZERO
UNITY GAIN
FREQUENCY
Notes:
1. Absolute maximum ratings indicate limits which when exceeded may result in damage to the component. Electrical
specifications do not apply when operating the device outside of its rated operating conditions.
2. Specified Min/Max limits are production tested or guaranteed through correlation based on statistical control methods.
Measurements are taken at constant junction temperature as close to ambient as possible using low duty pulse testing.
3. Dropout voltage is defined as the input to output differential voltage at which the output voltage drops 2% below the nominal
value measured with a 1V differential.
4. Guaranteed by design.


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