BC808 datasheet(1/2 Pages) HOTTECH

Numer części	BC808

Szczegółowy opis	Plastic-Encapsulate Transistors

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Producent	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Strona internetowa	http://www.hottech.net.cn/

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Suitable for AF-Driver stages and low power output stages

Complement to BC818

BC808-16

BC808-25

BC808-40

5E

5F

5G

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-30

V

DCollector-Emitter Voltage

V

CEO

-25

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

800

mA

Collector Power Dissipation

PC

300

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-100μA, IE=0

-30

V

Collector-emitter breakdown voltage

VCEO

IC=-10mA, IB=0

-25

V

Emitter-base breakdown voltage

VEBO

IE=-100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-25V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-4V, IC=0

-0.1

μA

DC current gain

hFE(1)

VCE=-1V, IC=-100mA

100

630

hFE(2)

VCE=-1V, IC=-300mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB=-50mA

-0.7

V

Base-emitter voltage

VBE

VCE=-1V, IC=-300mA

-1.2

V

Transition frequency

fT

VCE=-5V, IC=-10mA, f=50MHz

100

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

12

pF

CLASSIFICATION OF

hFE

Rank

5E

5F

5G

Range

100-250

160-400

250-630

(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

BC808-16

BC808-25

BC808-40

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