2SA1664 datasheet(1/1 Pages) HOTTECH

Numer części	2SA1664

Szczegółowy opis	Plastic-Encapsulate Transistors

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Producent	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Strona internetowa	http://www.hottech.net.cn/

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

•

Complementary to 2SC2884

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-35

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current -Continuous

IC

-800

mA

Collector Power dissipation

PC

500

mW

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-1mA,IE=0

-35

V

Collector- emitter breakdown voltage

VCEO

IC=-10mA,IB=0

-30

V

Emitter- base breakdown voltage

VEBO

IE=-1mA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-35V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-1V,IC=-100mA

100

320

VCE=-1V,IC=-700mA

35

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA,IB=-20mA

-0.7

V

Base-emitter

VBE

VCE=-1V,IC=-10mA

-0.5

-0.8

V

Transition frequency

fT

VCE=-5V, IC=-10mA

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

19

pF

CLASSIFICATION OF hFE

Rank

O

Y

Range

100-200

160-320

Marking

RO

RY

2SA1664 (PNP)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

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