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TDA9888TS Arkusz danych(PDF) 7 Page - NXP Semiconductors |
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TDA9888TS Arkusz danych(HTML) 7 Page - NXP Semiconductors |
7 / 22 page 2004 Nov 02 7 Philips Semiconductors Product specification DVB selective AGC amplifier TDA9888TS; TDA9889TS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Machine model (class B; SNW-FQ-302B): discharging a 200 pF capacitor via a 0.75 µH inductance. 2. Human body model (class 2; SNW-FQ-302A): discharging a 100 pF capacitor via a 1.5 k Ω series resistor. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VP supply voltage IP = 64 mA; Tamb =70 °C; maximum chip temperature of 125 °C; Rth(j-a) = maximum − 5.5 V Vi(n) input voltage at pins 1 to 11, 13, 15 and 16 − VP V tsc short-circuit time to ground or VP − 10 s Tstg storage temperature −25 +150 °C Tamb ambient temperature −20 +70 °C Ves electrostatic handling voltage for all pins note 1 −200 +200 V note 2 −2500 +2500 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air 136 K/W |
Podobny numer części - TDA9888TS |
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Podobny opis - TDA9888TS |
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