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TLP759 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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TLP759 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLP759(IGM) 2003-02-19 2 · Option (D4) type VDE approved: DIN VDE0884 / 06.92, Maximum operating insulation voltage: 890VPK Highest permissible over voltage: 6000VPK (Note 1) When a VDE0884 approved type is needed, please designate the “Option (D4)” · Structural parameter 7.62mm pich TLP759 (IGM) Creepage distance: 7.0mm (min.) Clearance: 7.0mm (min.) Insulation thickness: 0.4mm (min.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current (Note 2) IF 25 mA Pulse forward current (Note 3) IFP 50 mA Peak transient forward current (Note 4) IFPT 1 A Reverse voltage VR 5 V Diode power dissipation (Note 5) PD 45 mW Output current IO 8 mA Peak output current IOP 16 mA Output voltage VO -0.5~20 V supply voltage VCC -0.5~30 V Output power dissipation (Note 6) PO 100 mW Operating temperature range Topr -55~100 °C Storage temperature range Tstg -55~125 °C Lead solder temperature(10s) (Note 7) Tsol 260 °C Isolation voltage(AC,1min.,R.H.≤60%,Ta=25°C) (Note 8) BVS 5000 Vrms (Note 2): Derate 0.8mA above 70°C. (Note 3): 50% duty cycle,1ms pulse width. Derate 1.6mA / °C above 70°C. (Note 4): Pulse width PW ≤ 1µs,300pps. (Note 5): Derate 0.9mW / °C above 70°C. (Note 6): Derate 2mW / °C above 70°C. (Note 7): Soldering portion of lead: Up to 2mm from the body of the device. (Note 8): Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. |
Podobny numer części - TLP759 |
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Podobny opis - TLP759 |
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