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FSB50760SF Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FSB50760SF Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 28 page AN-9080 APPLICATION NOTE © 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.1 • 4/16/14 4 3. Package 3.1. Internal Circuit Diagram Major differences between Version 2 and previous versions are red in the internal circuit diagram in Figure 2. Though some old versions also have these features, Version 2 widely adopts these features. Main differences are Vts, internal connections between VS and sources of high-side FRFETs, and internal bootstrap diodes. The Vts pin is from V-phase HVIC only and sends out the temperature sensing signal. (1) COM (2) V B(U) (3) V CC(U) (4) IN (UH) (5) IN (UL) (6) N.C (7) V B(V) (8) V CC(V) (9) IN (VH) (10) IN (VL) (11) Vts (12) V B(W) (13) V CC(W) (14) IN (WH) (15) IN (WL) (16) (17) P (18) U, V S(U) (19) N U (20) N V (21) V, V S(V) (22) N W (23) W, V S(W) COM VCC LIN HIN VB HO VS LO COM VCC LIN HIN VB HO VS LO Vts COM VCC LIN HIN VB HO VS LO N.C Figure 2. Internal Circuit Diagram of Motion SPM 5 Series Version 2 Products 3.2. Pin Description Figure 3 shows the locations of pins and the names of double-DIP package. Note that Vb pins have longer leads to accommodate further creepage distance on the PCB. Figure 4 in the later section illustrates the internal layout of the module in more detail. Figure 3. Pin Numbers and Names Table 3. Pin Descriptions Pin # Name Pin Description 1 COM IC common supply ground 2 VB(U) Bias voltage for U-phase high-side MOSFET driving 3 VCC(U) Bias voltage for U-phase IC and low-side MOSFET driving 4 IN(UH) Input for U-phase high-side gate signal 5 IN(UL) Input for U-phase low-side gate signal 6 NC No connection 7 VB(V) Bias voltage for V-phase high-side MOSFET driving 8 VCC(V) Bias voltage for V-phase IC and low-side MOSFET driving 9 IN(VH) Input for V-phase high-side gate signal 10 IN(VL) Input for V-phase low-side gate signal 11 VTS Analog voltage output proportional to IC temperature 12 VB(W) Bias voltage for W-phase high-side MOSFET driving 13 VCC(W) Bias voltage for W-phase IC and low-side MOSFET driving 14 IN(WH) Input for W-phase high-side gate signal 15 IN(WL) Input for W-phase low-side gate signal 16 NC No connection 17 P Positive DC-link input 18 U, VS(U) Output for U-phase and bias voltage ground for high-side FET driving 19 NU Source of U-phase low-side MOSFET 20 NV Source of V-phase low-side MOSFET 21 V, VS(V) Output for V-phase and bias voltage ground for high-side MOSFET driving 22 NW Source of W-phase low-side MOSFET 23 W, VS(W) Output for W-phase and bias voltage ground for high-side MOSFET driving High-Side Bias Voltage Pins for Driving the High- Side MOSFET / High-Side Bias Voltage Ground Pins for Driving the High-Side MOSFET Pins: VB(U) – U,VS(U), VB(V) – V, VS(V), VB(W) – W, VS(W) These are drive power supply pins for providing gate drive power to the high-side MOSFETs. The advantage of the bootstrap scheme is that no separate external power supplies are required to drive the high-side MOSFETs. Each bootstrap capacitor is generally charged from the VCC supply during the on-state of the corresponding low-side MOSFET. |
Podobny numer części - FSB50760SF |
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Podobny opis - FSB50760SF |
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