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BF1205 Arkusz danych(PDF) 9 Page - NXP Semiconductors |
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BF1205 Arkusz danych(HTML) 9 Page - NXP Semiconductors |
9 / 24 page 2003 Sep 30 9 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1205 handbook, halfpage 0 12 0 4 2 6 8 10 246 VGG = VDS (V) ID (mA) MGX436 (5) (4) (3) (2) (1) Fig.9 Drain current as a function of gate 2 and drain supply voltage; typical values; amplifier a. VDS (a) = 5 V; VG1-S (b) = 0 V; Gate 1 (a) = open; Tj =25 °C. (1) VDS (b) = 5 V. (2) VDS (b) = 4.5 V. (3) VDS (b) = 4 V. (4) VDS (b) = 3.5 V. (5) VDS (b) = 3 V. handbook, halfpage 0 gain reduction (dB) 60 120 110 90 80 100 20 40 MGX437 Vunw (dB µV) Fig.10 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; amplifier a. VDS (a)=VDS (b) = 5 V; VG1-S (b) = 0 V; f w = 50 MHz; f unw = 60 MHz; Tamb =25 °C; see Fig.13. |
Podobny numer części - BF1205 |
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Podobny opis - BF1205 |
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