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TL431ILPG Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części TL431ILPG
Szczegółowy opis  Programmable Precision References
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TL431ILPG Arkusz danych(HTML) 2 Page - ON Semiconductor

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TL431A, B Series, NCV431A, B Series, SCV431A
www.onsemi.com
2
1.0 k
Cathode
(K)
2.5 Vref
Anode (A)
Reference
(R)
4.0 k
150
Figure 1. Symbol
10 k
20 pF
800
Cathode (K)
3.28 k
Anode (A)
-
+
Anode
(A)
800
Reference
(R)
2.4 k
7.2 k
20 pF
800
Cathode
(K)
Reference
(R)
This device contains 12 active transistors.
Figure 2. Representative Block Diagram
Figure 3. Representative Schematic Diagram
Component values are nominal
MAXIMUM RATINGS (Full operating ambient temperature range applies, unless otherwise noted.)
Rating
Symbol
Value
Unit
Cathode to Anode Voltage
VKA
37
V
Cathode Current Range, Continuous
IK
−100 to +150
mA
Reference Input Current Range, Continuous
Iref
−0.05 to +10
mA
Operating Junction Temperature
TJ
150
°C
Operating Ambient Temperature Range
TA
°C
TL431I, TL431AI, TL431BI
−40 to +85
TL431C, TL431AC, TL431BC
0 to +70
NCV431AI, NCV431B, TL431BV, SCV431AI
−40 to +125
Storage Temperature Range
Tstg
−65 to +150
°C
Total Power Dissipation @ TA = 25°C
PD
W
Derate above 25
°C Ambient Temperature
D, LP Suffix Plastic Package
0.70
P Suffix Plastic Package
1.10
DM Suffix Plastic Package
0.52
Total Power Dissipation @ TC = 25°C
PD
W
Derate above 25
°C Case Temperature
D, LP Suffix Plastic Package
1.5
P Suffix Plastic Package
3.0
ESD Rating (Note 1)
Human Body Model per JEDEC JESD22−A114F
Machine Model per JEDEC JESD22−A115C
Charged Device Model per JEDEC JESD22−C101E
HBM
MM
CDM
>2000
>200
>500
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device contains latch−up protection and exceeds
±100 mA per JEDEC standard JESD78.
RECOMMENDED OPERATING CONDITIONS
Condition
Symbol
Min
Max
Unit
Cathode to Anode Voltage
VKA
Vref
36
V
Cathode Current
IK
1.0
100
mA
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.


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