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TIP35CF Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TIP35CF Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification 2 isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TIP35CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT *VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 100 V *VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A 1.8 V *VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A 4.0 V *VBE(on)-1 Base-Emitter On Voltage IC= 15A ; VCE= 4V 2.0 V *VBE(on)-2 Base-Emitter On Voltage IC= 25A ; VCE= 4V 4.0 V ICEO Collector Cutoff Current VCE= 60V; IB= 0 1.0 mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.7 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA *hFE-1 DC Current Gain IC= 1.5A ; VCE= 4V 25 *hFE-2 DC Current Gain IC= 15A ; VCE= 4V 15 75 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V;ftest= 1.0MHz 3 MHz *Pulse test: Pulse width 300µs, Duty cycle <2% |
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