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TIP35F Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TIP35F Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification 2 isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TIP35F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 160 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 3A 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 6.25A 5.0 V VBE(on)-1 Base-Emitter On Voltage IC= 15A ; VCE= 4V 2.0 V VBE(on)-2 Base-Emitter On Voltage IC= 25A ; VCE= 4V 4.0 V ICEO Collector Cutoff Current VCE= 90V; IB= 0 1.0 mA ICBO Collector Cutoff Current VCB= 200V; IE= 0 0.7 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1.5A ; VCE= 4V 25 hFE-2 DC Current Gain IC= 15A ; VCE= 4V 8 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V; ftest= 1.0MHz 3 MHz Switching Times ton Turn-On Time IC= 15A; IB1= -IB2= 1.5A; VBE(off)= 4.15V; RL= 2Ω 1.2 μ s toff Turn-Off Time 0.9 μ s |
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