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SI4967DY-T1 Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI4967DY-T1 Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si4967DY Vishay Siliconix www.vishay.com 2 Document Number: 70813 S-31989—Rev. C, 13-Oct-03 SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA -0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = -12 V, VGS = 0 V -1 mA Zero Gate Voltage Drain Current IDSS VDS = -12 V, VGS = 0 V, TJ = 70_C -5 mA On-State Drain Currenta ID(on) VDS w -5 V, VGS = -4.5 V -20 A VGS = -4.5 V, ID = -7.5 A 0.019 0.023 Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -6.7 A 0.024 0.030 W DS(on) VGS = -1.8 V, ID = -5.4 A 0.033 0.045 Forward Transconductancea gfs VDS = -10 V, ID = -7.5 A 27 S Diode Forward Voltagea VSD IS = -1.7 A, VGS = 0 V 0.7 -1.2 V Dynamicb Total Gate Charge Qg 35 55 Gate-Source Charge Qgs VDS = -6 V, VGS = -10 V, ID = -7.5 A 7 nC Gate-Drain Charge Qgd 7 Turn-On Delay Time td(on) 25 50 Rise Time tr VDD = -6 V, RL = 10 W 40 80 Turn-Off Delay Time td(off) VDD = -6 V, RL = 10 W ID ^ -1 A, VGEN = -10 V, RG = 6 W 210 350 ns Fall Time tf 95 150 Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 A/ms 50 80 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. |
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