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2SC3518-Z Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3518-Z Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SC3518-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA 0.3 V VBE(sat)NOTE Base-Emitter Saturation Voltage IC= 2A; IB= 200mA 1.2 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μ A hFE-1NOTE DC Current Gain IC= 5A; VCE= 1V 50 hFE-2NOTE DC Current Gain IC= 2A; VCE= 1V 100 400 fTNOTE Current-Gain—Bandwidth Product IC= 500mA; VCE= 10V 120 MHz NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse hFE-2 Classifications M L K 100-200 160-320 200-400 |
Podobny numer części - 2SC3518-Z |
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Podobny opis - 2SC3518-Z |
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