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2SC3518-Z Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części 2SC3518-Z
Szczegółowy opis  isc Silicon NPN Power Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3518-Z Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SC3518-Z
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCE(sat)NOTE
Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA
0.3
V
VBE(sat)NOTE
Base-Emitter Saturation Voltage
IC= 2A; IB= 200mA
1.2
V
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
10
μ
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
μ
A
hFE-1NOTE
DC Current Gain
IC= 5A; VCE= 1V
50
hFE-2NOTE
DC Current Gain
IC= 2A; VCE= 1V
100
400
fTNOTE
Current-Gain—Bandwidth Product
IC= 500mA; VCE= 10V
120
MHz
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
hFE-2 Classifications
M
L
K
100-200
160-320 200-400


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