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2N3570 Arkusz danych(PDF) 1 Page - Advanced Semiconductor |
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2N3570 Arkusz danych(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 2 mA 15 V BVCBO IC = 1.0 µA30 V ICBO VCB = 6.0 V TA = 150 OC 10 1.0 µµµµA BVEBO IE = 10 µA3.0 V hFE VCE = 6.0 V IC = 5.0 mA 20 150 --- Cob VCB = 6 V f = 1.0 MHz 0.75 pF hFE VCE = 6 V IC = 5 mA 20 150 --- h fe VCE = 6 V IC = 5 mA f = 400 MHz 3.75 4.25 6 --- rb ´´´´C C VCB = 6 V IE = -5 mA f = 79.8 MHz 1 5 8 pF POSC VCC = 20 V IC = 15 mA f = 1.0 GHz 60 mW NF VCB = 6 V IC = 2 mA RG = 50 Ω f = 1.0 GHz 6 7 dB NPN SILICON HIGH FREQUENCY TRANSISTOR 2N3570 DESCRIPTION: The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC θθθθ JC 500 OC/W PACKAGE STYLE TO- 72 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE |
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