BC848CDW1T1 datasheet(4/6 Pages) ONSEMI

Numer części	BC848CDW1T1

Szczegółowy opis	Dual General Purpose Transistors

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Producent	ONSEMI [ON Semiconductor]

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BC846BDW1T1, BC847BDW1T1, BC848CDW1T1

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TYPICAL CHARACTERISTICS − BC846

Figure 7. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

0.8

1.0

0.6

0.2

0.4

1.0

2.0

0.1

1.0

10

100

0.2

0.5

0.2

1.0

10

200

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−1.0

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

0.2

2.0

10

200

1.0

TA = 25°C

200 mA

50 mA

IC =

10 mA

VCE = 5 V

TA = 25°C

0

0.5

2.0

5.0

20

50

100

0.05

0.2

0.5

2.0

5.0

100 mA

20 mA

−1.4

−1.8

−2.2

−2.6

−3.0

0.5

5.0

20

50

100

−55°C to 125°C

qVB for VBE

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40

Figure 12. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

0.1

0.2

1.0

50

2.0

10

100

200

500

50

20

10

6.0

4.0

1.0

10

50 100

5.0

VCE = 5 V

TA = 25°C

0.5

5.0

20

TA = 25°C

Cob

Cib

Podobny numer części - BC848CDW1T1

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