BDX20 datasheet(2/2 Pages) ETC

Numer części	BDX20

Szczegółowy opis	PNP SILICON TRANSISTORS EPITAXIAL BASE

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COMSET SEMICONDUCTORS

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BDX20

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (*)

IC=-200 mA, IB=0

-140

-

V

VCEX

Collector-Emitter

Breakdown Voltage (*)

IC=-100 mA, VBE=1.5 V

-160

-

V

VCE=-140 V, VBE=1.5 V

-

-1.0

ICEX

Collector Cutoff Current

VCE=-140 V, VBE=1.5 V, TCASE=150°C

-

-10

mA

ICBO

Collector-Base Cutoff

Current

VCB=-140 V, IE=0

-

-1.0

mA

IEBO

Emitter-Base Cutoff Current VBE=-7.0 V, IC=0

-

-5.0

mA

IC=-3.0 A, VCE=-4.0 V

20

-

70

h21E

Static Forward Current

Transfer Ratio (*)

IC=10 A, VCE=-4.0 V

-

10

-

IC=-3.0 A, IB=-0.3 A

-

-1.0

VCE(SAT)

Collector-Emitter Saturation

Voltage (*)

IC=-10 A, IB=-2 A

-

-5.0

V

IC=-3.0 Adc, VCE=-4.0 V

-

-1.7

-

VBE

Base-Emitter Voltage (*)

IC=-10 A, VCE=-4.0 V

-

-5.7

-

V

fT

Transition Frequency

VCE=-10 V, IC=-1.0 Adc, f=1.0 MHz

4

-

MHz

In accordance with JEDEC Registration Data

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

MECHANICAL DATA CASE TO-3

DIMENSIONS

mm

inches

A

25,51

1,004

B

38,93

1,53

C

30,12

1,18

D

17,25

0,68

E

10,89

0,43

G

11,62

0,46

H

8,54

0,34

L

1,55

0,6

M

19,47

0,77

N

1

0,04

P

4,06

0,16

Pin 1 :

Base

Pin 2 :

Collector

Case :

Emitter

Podobny numer części - BDX20

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