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BDX6B Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części BDX6B
Szczegółowy opis  isc Silicon PNP Darlington Power Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDX6B Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Darlington Power Transistor
BDX66/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX66
IC= -50mA ;IB=0
-60
V
BDX66A
-80
BDX66B
-100
BDX66C
-120
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -10A; IB= -40mA
-2
V
VBE(on)
Base-Emitter On Voltage
IC= -10A ; VCE= -3V
-2.5
V
VECF
C-E Diode Forward Voltage
IF= -10A
-2
V
ICEO
Collector Cutoff Current
VCE= 1/2VCEOmax; IB= 0
-1
mA
ICBO
Collector Cutoff Current
BDX66
VCB= -40V;IE= 0;TJ= 150℃
-5
mA
BDX66A
VCB= -50V;IE= 0;TJ= 150℃
BDX66B
VCB= -60V;IE= 0;TJ= 150℃
BDX66C
VCB= -70V;IE= 0;TJ= 150℃
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
-1
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-5
mA
hFE-1
DC Current Gain
IC= -1A ; VCE= -3V
2000
hFE-2
DC Current Gain
IC= -10A ; VCE= -3V
1000
hFE-3
DC Current Gain
IC= -16A ; VCE= -3V
1000
COB
Output Capacitance
IE= 0 ; VCB= -10V; ftest= 1MHz
300
pF
Switching times
ton
Turn-on Time
IC= -10A; IB1= -IB2= -40mA
1
μ
s
toff
Turn-off Time
3.5
μ
s


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